IDK10G120C5XTMA1 parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ Diode rectifier/ IDK10G120C5XTMA1

The pictures are for reference only

Brand:

Infineon

Model:

IDK10G120C5XTMA1

Description:

SIC DISCRETE

Stock:

54651

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$1.09

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Capacitance at different Vr and F

525pF @ 1V,1MHz

Current - reverse leakage at different Vr

18 µA @ 1200 V

Current average rectification (Io)

31.9A(DC)

Diode type

SiC Schottky

Reverse recovery time (trr)

Supplier device packaging

PG-TO263-2-1

Voltage DC reverse (Vr) (maximum)

1200 V

Voltage at different If - forward (Vf)

1.8 V @ 10 A

packing

TR,CT

series

CoolSiC™+

speed

No recovery time > 500mA(Io)

working temperature

Encapsulation/Housing

TO-263-3,D²Pak(2 feedthrough + splicing),TO-263AB

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

SearchIDK10G120C5XTMA1

IDK10G120C5XTMA1（Diode rectifier）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory54651,Price reference "real-time change" China/Hongkong。 IDK10G120C5XTMA1 package/specs, Download IDK10G120C5XTMA1、Datasheet。